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DATA SHEET
BLF348 VHF linear push-pull power MOS transistor
Product specification October 1992
Philips Semiconductors
Product specification
VHF linear push-pull power MOS transistor
FEATURES * High power gain * Easy power control * Good thermal stability * Gold metallization ensures excellent reliability. DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor, designed for broadcast transmitter applications in the VHF frequency range. The transistor is encapsulated in a 4-lead, SOT262 A1 balanced flange envelope, with two ceramic caps. The mounting flange provides the common source connection for the transistors. PINNING - SOT262A1 PIN 1 2 3 4 5 DESCRIPTION drain 1 drain 2 gate 1 gate 2 source
5 3
Top view
BLF348
PIN CONFIGURATION
1
k, halfpage
2
d2 g2 g1 s d1
MBB157
5 4
MSB008
Fig.1 Simplified outline and symbol.
CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling. WARNING Product and environment safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
QUICK REFERENCE DATA RF performance in a push-pull common source test circuit. MODE OF OPERATION class-A fvision (MHz) 224.25 224.25 Note 1. Three-tone test method (vision carrier -8 dB, sound carrier -7 dB, sideband signal -16 dB), zero dB corresponds to peak synchronization level. VDS (V) 28 28 ID (A) 2 x 4.6 2 x 4.6 Th (C) 70 25 dim (dB) (note 1) -52 -52 Po sync (W) > 67 typ. 75 Gp (dB) > 11 typ. 13
October 1992
2
Philips Semiconductors
Product specification
VHF linear push-pull power MOS transistor
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). Per transistor section unless otherwise specified. SYMBOL VDSS VGSS ID Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage DC drain current total power dissipation storage temperature junction temperature up to Tmb = 25 C; total device; both sections equally loaded CONDITIONS - - - - -65 - MIN.
BLF348
MAX. 65 20 25 500 150 200
UNIT V V A W C C
THERMAL RESISTANCE SYMBOL Rth j-mb Rth mb-h PARAMETER thermal resistance from junction to mounting base thermal resistance from mounting base to heatsink CONDITIONS total device; both sections equally loaded total device; both sections equally loaded THERMAL RESISTANCE 0.35 K/W 0.15 K/W
102 handbook, halfpage ID (A)
(1) (2)
MRA933
handbook, halfpage
500
MGE616
Ptot (W)
400 (2) (1) 300
10 200
100
1 1 10 VDS (V) 102
0
0
40
80
120 Th (C)
160
(1) Current is this area may be limited by RDS(on). (2) Tmb = 25 C. Total device; both sections equally loaded.
(1) Continuous operation. (2) Short-time operation during mismatch. Total device; both sections equally loaded.
Fig.2 DC SOAR.
Fig.3 Power/temperature derating curves.
October 1992
3
Philips Semiconductors
Product specification
VHF linear push-pull power MOS transistor
CHARACTERISTICS (per section) Tj = 25 C unless otherwise specified. SYMBOL V(BR)DSS IDSS IGSS VGS(th) VGS(th) gfs gfs1/gfs2 RDS(on) IDSX Cis Cos Crs PARAMETER drain-source breakdown voltage drain-source leakage current gate-source leakage current gate-source threshold voltage gate-source voltage difference of both transistor sections forward transconductance forward transconductance ratio of both transistor sections drain-source on-state resistance on-state drain current input capacitance output capacitance feedback capacitance CONDITIONS VGS = 0; ID = 0.1 A VGS = 0; VDS = 28 V VGS = 20 V; VDS = 0 ID = 0.1 A; VDS = 10 V ID = 0.1 A; VDS = 10 V ID = 8 A; VDS = 10 V ID = 8 A; VDS = 10 V ID = 8 A; VGS = 10 V VGS = 10 V; VDS = 10 V VGS = 0; VDS = 28 V; f = 1 MHz VGS = 0; VDS = 28 V; f = 1 MHz VGS = 0; VDS = 28 V; f = 1 MHz MIN. 65 - - 2 - 5 0.9 - - - - - TYP. - - - - - 7.5 - 0.1 37 495 340 40
BLF348
MAX. - 5 1 4.5 100 - 1.1 0.15 - - - -
UNIT V mA A V mV S
A pF pF pF
handbook, halfpage
0
MGP229
MGP230
handbook, halfpage
60
T.C. (mV/K) -1
ID (A) 40
-2
-3 20 -4
-5 10-1
1
ID (A)
10
0 0 5 10 15 VGS (V) 20
VDS = 10 V.
VDS = 10 V; Tj = 25 C.
Fig.4
Temperature coefficient of gate-source voltage as a function of drain current, typical values per section.
Fig.5
Drain current as a function of gate-source voltage, typical values per section.
October 1992
4
Philips Semiconductors
Product specification
VHF linear push-pull power MOS transistor
BLF348
MGP231
MGP234
handbook, halfpage
200
handbook, halfpage
1500
RDSon (m) 150
C (pF) 1000
100
500
Cis Cos
50 0 ID = 8 A; VGS = 10 V. 50 100 Tj (C) 150
0 0 VGS = 0; f = 1 MHz. 10 20 30 VDS (V) 40
Fig.6
Drain-source on-state resistance as a function of junction temperature, typical values per section.
Fig.7
Input and output capacitance as functions of drain-source voltage, typical values per section.
MGP232
handbook, halfpage
600
handbook, halfpage
-50
MGP233
Crs (pF) 400
dim (dB) -55 Th = 70 C 25 C
-60
200 -65
0 0 10 20 30 VDS (V) 40
-70 10
30
50
70 90 Po sync (W)
VGS = 0; f = 1 MHz.
Fig.8
Feedback capacitance as a function of drain-source voltage, typical values per section.
Fig.9
Intermodulation distortion as a function of peak synchronized output power.
October 1992
5
Philips Semiconductors
Product specification
VHF linear push-pull power MOS transistor
APPLICATION INFORMATION FOR CLASS-A OPERATION Th = 70 C; Rth mb-h = 0.15 K/W unless otherwise specified. RF performance in a linear amplifier (common source circuit class-A circuit). RGS = 82 per section; optimum load impedance per section = 0.14 + j0.14 . MODE OF OPERATION class-A fvision (MHz) 224.25 224.25 224.25 224.25 Note VDS (V) 28 28 28 28 ID (A) 2 x 4.6 2 x 4.6 2 x 4.6 2 x 4.6 Th (C) 70 25 70 25 dim (dB) (note 1) -52 -52 -55 -55 Po sync (W) > 67 typ. 70 typ. 75 > 54 typ. 57 typ. 62
BLF348
Gp (dB) > 11 typ. 12.5 typ. 13 > 11 typ.12.5 typ. 13
1. Three-tone test method (vision carrier -8 dB, sound carrier -7 dB, sideband signal -16 dB), zero dB corresponds to peak synchronization level. Ruggedness in class-A operation The BLF348 is capable of withstanding a load mismatch corresponding to VSWR = 20 through all phases under the following conditions: VDS = 28 V; f = 224.25 MHz at rated output power.
October 1992
6
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dbook, full pagewidth
October 1992
+5 V L1 C2 L4 50 input L2 C1 L3 C3 L5
Philips Semiconductors
VHF linear push-pull power MOS transistor
+VDD1 C20 C14 C21
C6 R1 C10
L10 R7 C22
R2 C11 C7
C15 C23 C16
R3 L6 L8
D.U.T.
L11 L14 L16
C28 L18 L20 C34 L22
C4
C5
C29
C30
C32
C33 C35
L23 C36 L24
50 output
7
L7
L9 R4 BFL348
L15 L17 L12 C17 C31
L19
L21
C8 C12
C24 C18
R5 C13 +5 V R8
C25 L13 C26
R6 C9
C19 C27
MGP235
Product specification
+VDD2 f = 225 MHz.
BLF348
Fig.10 Test circuit for class-A operation.
Philips Semiconductors
Product specification
VHF linear push-pull power MOS transistor
List of components (class-A test circuit) COMPONENT C1 C2, C3 C4, C30 C5 DESCRIPTION film dielectric trimmer multilayer ceramic chip capacitor (note 1) film dielectric trimmer multilayer ceramic chip capacitor (note 1) VALUE 2 to 9 pF 2 x 10 pF in parallel + 22 pF 5 to 60 pF 82 pF, 500 V 100 nF, 50 V 1 nF, 500 V 1 F 10 F, 63 V 220 F, 63 V 510 pF, 500 V 2 x 8.2 pF in parallel, 500 V 3 x 39 pF in parallel, 500 V 33 pF, 500 V 18 pF, 500 V 10 pF + 18 pF + 62 pF (3 in parallel), 500 V 2 to 18 pF 50 50 4.8 x 80 mm ext. conductor length 80 mm ext. dia 3.6 mm 6 x 32 mm 6 x 7 mm 6 x 7 mm DIMENSIONS
BLF348
CATALOGUE NO. 2222 809 09006
2222 809 08003
C6, C9, C10, C13, multilayer ceramic chip capacitor C14, C19 C11, C12, C20, C27 C21, C26 C22, C25 C15, C18, C23, C24 C28, C31 C29 C32 C33 C34, C35 multilayer ceramic chip capacitor (note 1) electrolytic capacitor electrolytic capacitor multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor (note 1) film dielectric trimmer stripline (note 2) semi-rigid cable (note 3)
2222 852 47104
C7, C8, C16, C17 MKT film capacitor
2222 371 11105
C36 L1, L3, L22, L24 L2, L23
2222 809 09003
L4, L5 L6, L7 L8, L9 L10, L13 L11, L12
stripline (note 2) stripline (note 2) stripline (note 2) grade 3B Ferroxcube wideband HF choke 3/4 turn enamelled 2 mm copper wire stripline (notes 2 and 4) stripline (notes 2 and 4) stripline (notes 2 and 4) stripline (notes 2 and 4)
43 43 43 2 in parallel 40 nH
4312 020 36642 space 1 mm int. dia. 10 mm leads 2 x 7 mm 6 x 6 mm 6 x 9.5 mm 6 x 27.5 mm 6 x 13 mm
L14, L15 L16, L17 L18, L19 L20, L21 October 1992
43 43 43 43 8
Philips Semiconductors
Product specification
VHF linear push-pull power MOS transistor
BLF348
COMPONENT R1, R6 R2, R5 R3, R4 R7, R8 Notes
DESCRIPTION 10 turns Bourns potentiometer 0.4 W metal film resistor 0.4 W metal film resistor 1 W, 5% metal film resistor 1 k 82 10
VALUE 50 k
DIMENSIONS
CATALOGUE NO.
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. The striplines L1, L3 - L9, L14 - L22 and L24 are on a double copper-clad printed circuit board with glass microfibre PTFE dielectric (r = 2.2); thickness 116 inch; thickness of copper sheet 2 x 35 m. 3. Semi-rigid cables L2 and L23 are soldered on to striplines L1 and L24. 4. A copper strap, thickness 0.8 mm, is soldered on to striplines L14 - L21.
October 1992
9
Philips Semiconductors
Product specification
VHF linear push-pull power MOS transistor
BLF348
MGP236
MGP237
handbook, halfpage
2
handbook, halfpage
0.8
Zi ()
ri
ZL () 0.6 RL
1
0 0.4 -1 xi -2 0.2 XL
-3 160
180
200
220
f (MHz)
240
0 160
180
200
220
f (MHz)
240
Class-A operation; VDS = 28 V; IDQ = 2 x 4.6 A; RGS = 82 (per section); Th = 70 C.
Class-A operation; VDS = 28 V; IDQ = 2 x 4.6 A; RGS = 82 (per section); Th = 70 C.
Fig.11 Input impedance as a function of frequency (series components), typical values.
Fig.12 Load impedance as a function of frequency (series components), typical values.
MGP238
handbook, halfpage
20
Gp (dB) 15
10
5
0 160
180
200
220
f (MHz)
240
Class-A operation; VDS = 28 V; IDQ = 2 x 4.6 A; RGS = 82 (per section); Th = 70 C.
Fig.13 Power gain as a function of frequency, typical values.
October 1992
10
Philips Semiconductors
Product specification
VHF linear push-pull power MOS transistor
PACKAGE OUTLINE Flanged double-ended ceramic package; 2 mounting holes; 4 leads
BLF348
SOT262A1
D
A F
U1 q H1 C w2 M C
B
c
1
2
H
U2
p
E1 w1 M A B
E
5
A
3
b e
4
w3 M Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 5.77 5.00 0.227 0.197 b 5.85 5.58 c 0.16 0.10 D e E E1 F 1.78 1.52 0.070 0.060 H 20.58 20.06 0.81 0.79 H1 17.02 16.51 0.67 0.65 p 3.28 3.02 0.129 0.119 Q 2.85 2.59 q 27.94 U1 34.17 33.90 1.345 1.335 U2 9.91 9.65 0.390 0.380 w1 0.51 0.02 w2 1.02 0.04 w3 0.25 0.01
21.98 10.27 10.29 11.05 21.71 10.05 10.03 0.865 0.404 0.405 0.435 0.855 0.396 0.395
0.230 0.006 0.220 0.004
0.112 1.100 0.102
OUTLINE VERSION SOT262A1
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-06-28
October 1992
11
Philips Semiconductors
Product specification
VHF linear push-pull power MOS transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLF348
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
October 1992
12

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